creat by art - ul recognized file # e-326243 - glass passivated junction - ideal for printed circuit board - typical ir less than 0.1ua - high surge current capability - esd capability pass aec-q101 level h3b - esd capability pass iec6100-4-2 level 4 - halogen-free according to iec 61249-2-21 definition v rrm v v rms v v dc v i f(av) a i 2 ta 2 sec r jc o c/w t j o c t stg o c document number ds_d1312012 version:c13 note 1 pulse test with pw=300u sec, 1% duty cycle note 2 : mount on heatsink size of 4" x 6" x 0.25" al-plate typical thermal resistance (note 2) 3.7 operating junction temperature range - 55 to + 150 storage temperature range - 55 to + 150 maximum instantaneous forward voltage (note 1) @ 25 a v f 1.1 v maximum dc reverse current t j =25 at rated dc blocking voltage t j =125 i r 10 500 ua peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 400 a rating for fusing (t<8.3ms) 664 maximum dc blocking voltage 600 800 1000 maximum average forward rectified current 50 maximum repetitive peak reverse voltage 600 800 1000 maximum rms voltage 420 560 700 mounting torque 8.17 in-lbs maximum weight 7.15 gram (approximately) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol TS50P05G ts50p06g ts50p07g unit ts-6p mechanical data case ts-6p molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free, rohs compliant terminal matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test polarity polarity as marked on the body TS50P05G thru ts50p07g taiwan semiconductor glass passivated brid g e rectifiers features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec
part no. note 1: "x" defines voltage from 600v (TS50P05G) to 1000v (ts50p07g) part no. ts50p07g ts50p07g (ta=25 unless otherwise noted) document number ds_d1312012 version:c13 ratings and characteristics curves ts50p07g c2 c2 ts50p07g c2g c2 g green compound 15 / tube (auto) x2 ts-6p forming example preferred p/n packing code green compound code description ts50p0xg (note 1) c2 suffix "g" ts-6p 15 / tube x0 ts-6p forming d2 ts-6p TS50P05G thru ts50p07g taiwan semiconductor ordering information packing code green compound code package packing 0 10 20 30 40 50 60 0 25 50 75 100 125 150 average forward a current (a) case temperature ( o c) fig.1 forward current derating curve resistive or inductive load with heatsink 50 100 150 200 250 300 350 400 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2 maximum non-repetitive forward surge current 8.3ms single half sine wave jedec method 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse current (ua) percent of rated peak reverse voltage (%) fig. 3 typical reverse characteristics tj=25 tj=125 0.1 1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 instantaneous forward current (a) instantaneous forward voltage (v) fig. 4 typical forward characteristics
min max min max a 29.70 30.30 1.169 1.193 b 2.30 2.70 0.091 0.106 c 2.00 2.40 0.079 0.094 d 0.90 1.10 0.035 0.043 e 9.80 10.20 0.386 0.402 f 7.30 7.70 0.287 0.303 g 19.70 20.30 0.776 0.799 h - 4.80 - 0.189 i 3.80 4.20 0.150 0.165 j 17.00 18.00 0.669 0.709 k 4.40 4.80 0.173 0.189 l 3.40 3.80 0.134 0.150 m 10.80 11.20 0.425 0.441 n 3.10 3.40 0.122 0.134 o 2.50 2.90 0.098 0.114 p 0.60 0.70 0.024 0.028 p/n = specific device code g = green compound yww = date code f = factory code document number ds_d1312012 version:c13 marking diagram TS50P05G thru ts50p07g taiwan semiconductor package outline dimensions dim. unit(mm) unit(inch) 10 100 1000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5 typical junction capacitance f=1.0mhz vsig=50mvp-p
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